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V54C316162 参数 Datasheet PDF下载

V54C316162图片预览
型号: V54C316162
PDF下载: 下载PDF文件 查看货源
内容描述: 200/183/166/143 MHz的3.3伏, 4K刷新超高性能1M ×16 SDRAM 2组X达512Kbit ×16 [200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16]
分类和应用: 动态存储器
文件页数/大小: 21 页 / 306 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V54C316162V
200/183/166/143 MHz 3.3 VOLT, 4K REFRESH
ULTRA HIGH PERFORMANCE
1M X 16 SDRAM 2 BANKS X 512Kbit X 16
s
JEDEC Standard 3.3V Power Supply
s
The V54C316162V is ideally suited for high per-
formance graphics peripheral applications
s
Single Pulsed RAS Interface
s
Programmable CAS Latency: 2, 3
s
All Inputs are sampled at the positive going edge
of clock
s
Programmable Wrap Sequence: Sequential or
Interleave
s
Programmable Burst Length: 1, 2, 4, 8 and Full
Page for Sequential and 1, 2, 4, 8 for Interleave
s
UDQM & LDQM for byte masking
s
Auto & Self Refresh
s
4K Refresh Cycles/64 ms
s
Burst Read with Single Write Operation
CILETIV LESOM
V54C316162V
Clock Frequency (t
CK
)
Latency
Cycle Time (t
CK
)
Access Time (t
AC
)
-5
200
3
5
5
-55
183
3
5.5
5.3
-6
166
3
6
5.5
-7
143
3
7
5.5
Unit
MHz
clocks
ns
ns
Features
Description
The V54C316162V is a 16,777,216 bits synchro-
nous high data rate DRAM organized as 2 x
524,288 words by 16 bits. The device is designed to
comply with JEDEC standards set for synchronous
DRAM products, both electrically and mechanically.
Synchronous design allows precise cycle control
with the system clock. The CAS latency, burst
length and burst sequence must be programmed
into device prior to access operation.
V54C316162V Rev.2.9 September 2001
1