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V54C365164VD 参数 Datasheet PDF下载

V54C365164VD图片预览
型号: V54C365164VD
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能225/200/166/143 MHz的3.3伏4M ×16的同步DRAM 4个bank X为1Mbit ×16 [HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16]
分类和应用: 动态存储器
文件页数/大小: 56 页 / 907 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V54C365164VD(L)
HIGH PERFORMANCE 225/200/166/143 MHz
3.3 VOLT 4M X 16 SYNCHRONOUS DRAM
4 BANKS X 1Mbit X 16
PRELIMINARY
s
4 banks x 1Mbit x 16 organization
s
High speed data transfer rates up to 225 MHz
s
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
s
Single Pulsed RAS Interface
s
Data Mask for byte Control
s
Four Banks controlled by BA0 & BA1
s
Programmable CAS Latency: 1, 2, 3
s
Programmable Wrap Sequence: Sequential or
Interleave
s
Programmable Burst Length:
1, 2, 4, 8 and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
s
Multiple Burst Read with Single Write Operation
s
Automatic and Controlled Precharge Command
s
Random Column Address every CLK (1-N Rule)
s
Suspend Mode and Power Down Mode
s
Auto Refresh and Self Refresh
s
Refresh Interval: 4096 cycles/64 ms
s
Available in 54 Pin 400 mil TSOP-II
s
LVTTL Interface
s
Single +3.3 V
±0.3
V Power Supply
CILETIV LESOM
System Frequency (f
CK
)
Clock Cycle Time (t
CK3
)
45
225 MHz
4.5 ns
4.5 ns
4.5 ns
12 ns
5
200 MHz
5 ns
5 ns
5 ns
12 ns
6
166 MHz
6 ns
5.4 ns
5.5 ns
12 ns
7
143 MHz
7 ns
5.4 ns
5.5 ns
12 ns
Clock Access Time (t
AC3
) CAS Latency = 3
Clock Access Time (t
AC2
) CAS Latency = 2
Clock Access Time (t
AC1
) CAS Latency = 1
Features
Description
The V54C365164VD(L) is a four bank Synchro-
nous DRAM organized as 4 banks x 1Mbit x 16. The
V54C365164VD(L) achieves high speed data trans-
fer rates up to 225 MHz by employing a chip archi-
tecture that prefetches multiple bits and then
synchronizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
225 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
Package Outline
T
Access Time (ns)
45
Power
7
5
6
Std.
L
Temperature
Mark
Blank
V54C365164VD(L) Rev. 1.3 September 2001
1