欢迎访问ic37.com |
会员登录 免费注册
发布采购

V54C3256804VAT 参数 Datasheet PDF下载

V54C3256804VAT图片预览
型号: V54C3256804VAT
PDF下载: 下载PDF文件 查看货源
内容描述: 的256Mbit SDRAM 3.3伏, TSOP II / SOC BGA / WBGA封装16M ×16 , 32M ×8 , 64M ×4 [256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4]
分类和应用: 动态存储器
文件页数/大小: 52 页 / 838 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
 浏览型号V54C3256804VAT的Datasheet PDF文件第2页浏览型号V54C3256804VAT的Datasheet PDF文件第3页浏览型号V54C3256804VAT的Datasheet PDF文件第4页浏览型号V54C3256804VAT的Datasheet PDF文件第5页浏览型号V54C3256804VAT的Datasheet PDF文件第6页浏览型号V54C3256804VAT的Datasheet PDF文件第7页浏览型号V54C3256804VAT的Datasheet PDF文件第8页浏览型号V54C3256804VAT的Datasheet PDF文件第9页  
V54C3256(16/80/40)4V(T/S/B)
256Mbit SDRAM
3.3 VOLT, TSOP II / SOC BGA / WBGA
PACKAGE 16M X 16, 32M X 8, 64M X 4
PRELIMINARY
CILETIV LESO M
6
System Frequency (f
CK
)
Clock Cycle Time (t
CK3
)
Clock Access Time (t
AC3
) CAS Latency = 3
Clock Access Time (t
AC2
) CAS Latency = 2
166 MHz
6 ns
5.4 ns
5.4 ns
7PC
143 MHz
7 ns
5.4 ns
5.4 ns
7
143 MHz
7 ns
5.4 ns
6 ns
8PC
125 MHz
8 ns
6 ns
6 ns
Features
4 banks x 4Mbit x 16 organization
4 banks x 8Mbit x 8 organization
4 banks x16Mbit x 4 organization
High speed data transfer rates up to 166 MHz
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
Single Pulsed RAS Interface
Data Mask for Read/Write Control
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2, 3
Programmable Wrap Sequence: Sequential or
Interleave
Programmable Burst Length:
1, 2, 4, 8 for Sequential Type
1, 2, 4, 8 for Interleave Type
Multiple Burst Read with Single Write Operation
Automatic and Controlled Precharge Command
Random Column Address every CLK (1-N Rule)
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 8192 cycles/64 ms
Available in 54 Pin TSOP II, 60 Ball WBGA and
SOC BGA
LVTTL Interface
Single +3.3 V
±0.3
V Power Supply
Description
The V54C3256(16/80/40)4V(T/S/B) is a four
bank Synchronous DRAM organized as 4 banks x
4Mbit x 16, 4 banks x 8Mbit x 8, or 4 banks x 16Mbit
x 4. The V54C3256(16/80/40)4V(T/S/B) achieves
high speed data transfer rates up to 166 MHz by
employing a chip architecture that prefetches multi-
ple bits and then synchronizes the output data to a
system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
166 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
Package Outline
T/S/B
Access Time (ns)
6
Power
8PC
7PC
7
Std.
L
Temperature
Mark
Blank
V54C3256(16/80/40)4V(T/S/B) Rev. 1.6 September 2002
1