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V61C518256-15R 参数 Datasheet PDF下载

V61C518256-15R图片预览
型号: V61C518256-15R
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8的高速静态RAM [32K X 8 HIGH SPEED STATIC RAM]
分类和应用:
文件页数/大小: 12 页 / 61 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC
Switching Waveforms (Write Cycle)
Write Cycle 1 (WE Controlled)
(4)
t
WC
ADDRESS
t
CW(6)
CE
t
AS
WE
t
WP(1)
OUTPUT
t
WHZ(3)
INPUT
t
DW
t
DH
t
AW
t
AH(2)
V61C518256
518256-11
Write Cycle 2 (CE Controlled)
(4)
t
WC
ADDRESS
t
AS
CE
t
AW
WE
Hi-Z
t
DW
INPUT
518256-12
t
CW(6)
t
AH(2)
OUTPUT
t
DH
(5)
NOTES:
1. The internal write time of the memory is defined by the overlap of CE active and WE low. Both signals must be active to initiate and
any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second
transition edge of the signal that terminates the write.
2. t
AH
is measured from the earlier of CE or WE going HIGH.
3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the outputs must not be applied.
4. OE = V
IL
or V
IH
. However it is recommended to keep OE at V
IH
during write cycle to avoid bus contention.
5. If CE is LOW during this period, I/O pins are in the output state. Then the data input signals of opposite phase to the outputs must
not be applied to them.
6. t
CW
is measured from CE going LOW to the end of write.
V61C518256 Rev. 0.3 July 1998
8