V62C1161024L(L)
Ultra Low Power
64K x 16 CMOS SRAM
Features
• Ultra Low-power consumption
- Active: 30mA I
CC
at 70ns
- Stand-by: 5
µ
A
(CMOS input/output)
1
µA
(
CMOS input/output, L version)
• 70/85/100/120 ns access time
• Equal access and cycle time
• Single +1.8V to 2.2V Power Supply
• Tri-state output
• Automatic power-down when deselected
• Multiple center power and ground pins for
improved noise immunity
• Individual byte controls for both Read and
Write cycles
• Available in 44 pin TSOP (II) Package
Functional Description
The V62C1161024L is a Low Power CMOS Static RAM
organized as 65,536 words by 16 bits. Easy memory exp-
ansion is provided by an active LOW (CE) and (OE) pin.
This device has an automatic power-down mode feature
when deselected. Separate Byte Enable controls (BLE
and BHE) allow individual bytes to be accessed. BLE
controls the lower bits I/O1 - I/O8. BHE controls the
upper bits I/O9 - I/O16.
Writing to these devices is performed by taking Chip
Enable (CE) with Write Enable (WE) and Byte Enable
(BLE/BHE) LOW.
Reading from the device is performed by taking Chip
Enable (CE) with Output Enable (OE) and Byte Enable
(BLE/BHE) LOW while Write Enable (WE) is held
HIGH.
Logic Block Diagram
Pre-Charge Circuit
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
TSOP(II)
Row Select
Vcc
Vss
Memory Array
1024 X 1024
I/O1 - I/O8
I/O9 - I/O16
Data
Cont
Data
Cont
I/O Circuit
Column Select
A10 A11 A12 A13 A14 A15
WE
OE
BHE
BLE
CE
A4
A3
A2
A1
A0
CE
I/O1
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
BHE
BLE
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
1
REV. 1.1
April
2001 V62C1161024L(L)
MOSEL [ MOSEL VITELIC, CORP ]
