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V62C1161024L-85T 参数 Datasheet PDF下载

V62C1161024L-85T图片预览
型号: V62C1161024L-85T
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗64K ×16的CMOS SRAM [Ultra Low Power 64K x 16 CMOS SRAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 10 页 / 121 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V62C1161024L(L)
Read Cycle
(9)
(V
cc
= 2V+0.2V, Gnd = 0V, T
A
= 0
0
C to +70
0
C / -40
0
C to +85
0
C)
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Enable to Output in Low-Z
Output Disable to Output in High-Z
BLE, BHE Enable to Output in Low-Z
BLE, BHE Disable to Output in High-Z
BLE, BHE Access Time
Sym
t
RC
t
AA
t
ACE
t
OE
t
OH
t
LZ
t
HZ
t
OLZ
t
OHZ
t
BLZ
t
BHZ
t
BA
70
-
-
-
10
10
-
5
-
5
-
-
-70
-
70
70
40
-
-
30
-
25
-
25
40
85
-
-
-
10
10
-
5
-
5
-
-
-85
-
85
85
40
-
-
35
-
30
-
30
40
-100
100
-
-
-
10
10
-
5
-
5
-
-
-
100
100
50
-
-
40
-
35
-
35
50
-120
120
-
-
-
10
10
-
5
-
5
-
-
-
120
120
60
-
-
40
-
40
-
40
60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
Min Max Min Max Min Max Min Max
4,5
3,4,5
4,5
3,4,5
Write Cycle
(11)
(V
cc
=2V+0.2V, Gnd = 0V, T
A
= 0
0
C to +70
0
C / -40
0
C to +85
0
C)
Parameter
Write Cycle Time
Chip Enable to Write End
Address Setup to Write End
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to Write End
Data Hold Time
Write Enable to Output in High-Z
Output Active from Write End
BLE, BHE Setup to Write End
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WHZ
t
OW
t
BW
70
60
60
0
50
0
30
0
-
5
60
-70
-
-
-
-
-
-
-
-
30
-
-
4
-85
85
70
70
0
60
0
35
0
-
5
70
-
-
-
-
-
-
-
-
35
-
-
-100
100
-120
-
-
-
-
-
-
-
-
120
90
40
0
80
0
45
0
-
5
90
-
-
-
-
-
-
-
-
40
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
Min Max Min Max Min Max Min Max
80
80
0
70
0
40
0
-
5
80
40
-
-
REV. 1.1
April
2001 V62C1161024L(L)