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V62C5181024L-70P 参数 Datasheet PDF下载

V62C5181024L-70P图片预览
型号: V62C5181024L-70P
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8静态RAM [128K X 8 STATIC RAM]
分类和应用:
文件页数/大小: 12 页 / 63 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC
Switching Waveforms (Write Cycle)
Write Cycle 1 (WE Controlled)
(4)
t
WC
ADDRESS
V62C5181024
t
WR(2)
t
CW(6)
CE
1
t
AW
CE
2
t
AS
WE
t
WP(1)
OUTPUT
t
WHZ
INPUT
5181024 12
t
CW(6)
t
DW
t
DH
Write Cycle 2 (CE Controlled)
(4)
t
WC
ADDRESS
t
CW(6)
CE
1
t
AW
CE
2
t
AS
WE
High-Z
t
DW
INPUT
5181024 13
t
WR(2)
(4)
t
CW(6)
OUTPUT
t
DH
(5)
NOTES:
1. The internal write time of the memory is defined by the overlap of CE
1
and CE
2
active and WE low. All signals must be active to
initiate and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to
the second transition edge of the signal that terminates the write.
2. t
WR
is measured from the earlier of CE
1
or WE going high, or CE
2
going LOW at the end of the write cycle.
3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the outputs must not be applied.
4. OE = V
IL
or V
IH
. However it is recommended to keep OE at V
IH
during write cycle to avoid bus contention.
5. If CE
1
is LOW and CE
2
is HIGH during this period, I/O pins are in the output state. Then the data input signals of opposite phase
to the outputs must not be applied to them.
6. t
CW
is measured from CE
1
going low or CE
2
going HIGH to the end of write.
V62C5181024 Rev. 2.2 February 2000
8