MOSPEC
GENERAL PURPOSE SILICON RECTIFIER
VOLTAGE RANGE 50 TO 1000 Volts Current 1 Ampere
FEATURES
＊Low
cost construction
＊Low
forward voltage drop
＊Low
reverse leakage
＊High
forward surge current capability
＊High
temperature soldering guaranteed
260℃/10 seconds, 0.375”(9.5 mm) lead length
at 5 lbs(2.3kg) tension
MECHANICAL DATA
＊Case：Transfer
Molded Plastic
＊Epoxy:
UL94V-O rate flame retardant
＊Terminals：Solderable
Per MIL-STD-202 Method 208
＊Polarity：Color
band denotes cathode end
＊Mounting
position: Any
＊Weight：
0.012 ounce. 0.33 gram (approx)
1N4001 THRU 1N4007
DO-41
DIM
A
B
C
D
MILLIMETERS
MIN
2.00
25.40
4.20
0.70
MAX
2.70
---
5.20
0.90
MAXIMUM RATINGS AND ELECTRICAL CHARATERISTICS
* Rating at 25℃ ambient temperature unless otherwise specified
* Single phase,half wave. 60Hz, resistive or inductive load.
* For capacitive load derate current by 20 %
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Per Leg
T
C
=125℃
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions halfware,
single phase, 60Hz)
Maximum Instantaneous Forward Voltage
( I
F
=1.0 Amp T
C
= 25℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T
C
= 25℃)
( Rated DC Voltage, T
C
= 100℃)
Typical Junction Capacitance
(Reverse Voltage of 4 volts & f=1 MHz)
Typical Thermal Resistance
Operating and Storage Junction
Temperature Range
Symbol
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
V
RRM
V
RWM
V
R
V
R(RMS)
I
F(AV)
I
FSM
V
F
I
R
C
j
R
θ
jA
T
J
, T
stg
50
100
200
400
600
800
1000
Unit
V
35
70
140
280
1.0
30
1.1
5.0
50
15
50
-65 to +175
420
560
700
V
A
A
V
uA
pF
℃/W
℃
MOSPEC [ MOSPEC SEMICONDUCTOR ]
