MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
＊Low
Forward Voltage.
＊Low
Switching noise.
＊High
Current Capacity
＊Guarantee
Reverse Avalanche.
＊Guard-Ring
for Stress Protection.
＊Low
Power Loss & High efficiency.
＊150℃
Operating Junction Temperature
＊Low
Stored Charge Majority Carrier Conduction.
＊Plastic
Material used Carries Underwriters Laboratory
S40D90CE Thru S40D100CE
SCHOTTKY BARRIER
RECTIFIERS
40 AMPERES
90-100 VOLTS
Flammability Classification 94V-O
TO-3P
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Total Device (Rated V
R
),T
C
=100℃
Peak Repetitive Forward Current
(Rate V
R
, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
F(AV)
S40D90CE
90
S40D100CE
100
Unit
V
63
20
40
40
70
V
A
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
I
FM
A
I
FSM
300
A
T
J
, T
STG
-65 to +150
℃
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( I
F
=20 Amp T
C
= 25℃)
( I
F
=20 Amp T
C
= 125℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T
C
= 25℃)
( Rated DC Voltage, T
C
= 125℃)
Symbol
V
F
S40D90CE
0.85
0.75
S40D100CE
Unit
V
MILLIMETERS
MIN
MAX
20.63
22.38
15.38
16.20
1.90
2.70
5.10
6.10
14.81
15.22
11.72
12.84
4.20
4.50
1.82
2.46
2.92
3.23
0.89
1.53
5.26
5.66
18.50
21.50
4.68
5.36
2.40
2.80
3.25
3.65
0.55
0.70
I
R
2.0
80
mA
Common Cathode
Suffix “C”
MOSPEC [ MOSPEC SEMICONDUCTOR ]
