MOSPEC
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These
state-of-the-art geometry features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes.
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 125℃ Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory
SRF1670 Thru SRF16100
SCHOTTKY BARRIER
RECTIFIERS
16 AMPERES
70-100 VOLTS
ITO-220
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Total Device (Rated V
R
),T
C
=100℃
Peak Repetitive Forward Current
(Rate V
R
, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
Symbol
70
V
RRM
V
RWM
V
R
V
R(RMS)
I
F(AV)
70
80
80
SRF16
90
90
100
100
V
Unit
49
56
8.0
16
16
63
70
V
DIM
A
I
FM
A
I
FSM
150
A
T
J
, T
STG
-65 to +125
℃
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
O
Q
MILLIMETERS
MIN
MAX
15.05
15.15
13.35
13.45
10.00
10.10
6.55
6.65
2.65
2.75
1.55
1.65
1.15
1.25
0.55
0.65
2.50
2.60
3.00
3.20
1.10
1.20
0.55
0.65
4.40
4.60
1.15
1.25
2.65
2.75
3.35
3.45
3.15
3.25
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( I
F
=8 Amp T
C
= 25℃)
( I
F
=8 Amp T
C
= 125℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T
C
= 25℃)
( Rated DC Voltage, T
C
= 125℃)
Symbol
70
V
F
0.75
0.68
80
SRF16
90
0.85
0.73
100
V
Unit
I
R
1.0
20
mA
MOSPEC [ MOSPEC SEMICONDUCTOR ]
