MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Temperature-Compensated
Zener Reference Diodes
Temperature-compensated zener reference diodes utilizing a single chip oxide passi-
vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed
structure.
Mechanical Characteristics:
CASE:
Hermetically sealed, all-glass
DIMENSIONS:
See outline drawing.
FINISH:
All external surfaces are corrosion resistant and leads are readily solderable.
POLARITY:
Cathode indicated by polarity band.
WEIGHT:
0.2 Gram (approx.)
MOUNTING POSITION:
Any
Maximum Ratings
Junction Temperature: – 55 to +175°C
Storage Temperature: – 65 to +175°C
DC Power Dissipation: 400 mW @ TA = 50°C
WAFER FAB LOCATION:
Phoenix, Arizona
ASSEMBLY/TEST LOCATION:
Phoenix, Arizona
1N821,A 1N823,A
1N825,A 1N827,A
1N829,A
TEMPERATURE-
COMPENSATED
SILICON ZENER
REFERENCE DIODES
6.2 V, 400 mW
CASE 299
DO-204AH
GLASS
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted. VZ = 6.2 V
±
5%* @ IZT = 7.5 mA) (Note 5)
Maximum
Voltage Change
∆V
Z (Volts)
(Note 1)
Ambient
Test Temperature
°C
±1°C
Temperature
Coefficient
For Reference Only
%/°C
(Note 1)
Maximum
Dynamic Impedance
ZZT Ohms
(Note 2)
JEDEC
Type No.
1N821
1N823
1N825
1N827
1N829
0.096
0.048
0.019
0.009
0.005
– 55, 0, +25, +75, +100
0.01
0.005
0.002
0.001
0.0005
15
1N821A
1N823A
1N825A
1N827A
1N829A
0.096
0.048
0.019
0.009
0.005
0.01
0.005
0.002
0.001
0.0005
10
*Tighter-tolerance units available on special request.
Motorola TVS/Zener Device Data
6.2 Volt OTC 400 mW DO-35 Data Sheet
8-159
MOTOROLA [ MOTOROLA, INC ]
