MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N7000/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN
2
GATE
1 SOURCE
2N7000
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
— Continuous
— Non–repetitive (tp
≤
50
µs)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
Value
60
60
±
20
±
40
200
500
350
2.8
– 55 to +150
mW
mW/°C
°C
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
Symbol
R
θJA
TL
Max
357
300
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10
µAdc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current, Forward
(VGSF = 15 Vdc, VDS = 0)
V(BR)DSS
IDSS
—
—
IGSSF
—
1.0
1.0
–10
60
—
Vdc
µAdc
mAdc
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
1. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
VGS(th)
rDS(on)
0.8
3.0
Vdc
Ohm
—
—
VDS(on)
—
—
5.0
6.0
Vdc
2.5
0.45
REV 3
©
Motorola, Inc. 1997
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1