MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAV70LT1/D
Monolithic Dual Switching Diode
Common Cathode
ANODE
1
3
CATHODE
2
ANODE
BAV70LT1
Motorola Preferred Device
3
1
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
2
CASE 318 – 08, STYLE 9
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
BAV70LT1 = A4
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100
µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
RL = 100
Ω
(IF = IR = 10 mAdc, VR = 5.0 Vdc, IR(REC) = 1.0 mAdc) (Figure 1)
1. FR– 5 = 1.0
0.75
2. Alumina = 0.4
0.3
V(BR)
IR
—
—
—
CD
VF
—
—
—
—
trr
—
715
855
1000
1250
6.0
ns
—
60
2.5
100
1.5
pF
mVdc
70
—
Vdc
µAdc
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
MOTOROLA [ MOTOROLA, INC ]
