MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC327/D
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC327,-16,-25
BC328,-16,-25
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC327
–45
–50
–5.0
–800
625
5.0
1.5
12
– 55 to +150
BC328
–25
–30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = –100
µA,
IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10
m
A, IC = 0)
Collector Cutoff Current
(VCB = –30 V, IE = 0)
(VCB = –20 V, IE = 0)
Collector Cutoff Current
(VCE = –45 V, VBE = 0)
(VCE = –25 V, VBE = 0)
Emitter Cutoff Current
(VEB = –4.0 V, IC = 0)
BC327
BC328
ICES
BC327
BC328
IEBO
—
—
—
—
—
—
–100
–100
–100
nAdc
V(BR)CEO
BC327
BC328
V(BR)CES
BC327
BC328
V(BR)EBO
ICBO
—
—
—
—
–100
–100
nAdc
–50
–30
–5.0
—
—
—
—
—
—
Vdc
nAdc
–45
–25
—
—
—
—
Vdc
Vdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
MOTOROLA [ MOTOROLA, INC ]
