MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC556/D
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC556,B
BC557A,B,C
BC558B
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC
556
–65
–80
BC
557
–45
–50
–5.0
–100
625
5.0
1.5
12
– 55 to +150
BC
558
–30
–30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
V(BR)CEO
BC556
BC557
BC558
V(BR)CBO
BC556
BC557
BC558
V(BR)EBO
BC556
BC557
BC558
ICES
BC556
BC557
BC558
BC556
BC557
BC558
—
—
—
—
—
—
–2.0
–2.0
–2.0
—
—
—
–100
–100
–100
–4.0
–4.0
–4.0
nA
–5.0
–5.0
–5.0
—
—
—
—
—
—
–80
–50
–30
—
—
—
—
—
—
V
–65
–45
–30
—
—
—
—
—
—
V
V
Collector – Base Breakdown Voltage
(IC = –100
µAdc)
Emitter – Base Breakdown Voltage
(IE = –100
m
Adc, IC = 0)
Collector–Emitter Leakage Current
(VCES = –40 V)
(VCES = –20 V)
(VCES = –20 V, TA = 125°C)
µA
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1