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BC556B 参数 Datasheet PDF下载

BC556B图片预览
型号: BC556B
PDF下载: 下载PDF文件 查看货源
内容描述: 放大器晶体管 [Amplifier Transistors]
分类和应用: 晶体放大器晶体管
文件页数/大小: 6 页 / 223 K
品牌: MOTOROLA [ MOTOROLA, INC ]
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC556/D
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC556,B
BC557A,B,C
BC558B
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC
556
–65
–80
BC
557
–45
–50
–5.0
–100
625
5.0
1.5
12
– 55 to +150
BC
558
–30
–30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
V(BR)CEO
BC556
BC557
BC558
V(BR)CBO
BC556
BC557
BC558
V(BR)EBO
BC556
BC557
BC558
ICES
BC556
BC557
BC558
BC556
BC557
BC558
–2.0
–2.0
–2.0
–100
–100
–100
–4.0
–4.0
–4.0
nA
–5.0
–5.0
–5.0
–80
–50
–30
V
–65
–45
–30
V
V
Collector – Base Breakdown Voltage
(IC = –100
µAdc)
Emitter – Base Breakdown Voltage
(IE = –100
m
Adc, IC = 0)
Collector–Emitter Leakage Current
(VCES = –40 V)
(VCES = –20 V)
(VCES = –20 V, TA = 125°C)
µA
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1