MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC636/D
High Current Transistors
PNP Silicon
COLLECTOR
2
3
BASE
1
EMITTER
BC636
BC638
BC640
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC
636
–45
–45
BC
638
–60
–60
–5.0
–0.5
625
5.0
1.5
12
– 55 to +150
BC
640
–80
–80
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Watt
mW/°C
°C
1
2
3
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage*
(IC = –10 mAdc, IB = 0)
V(BR)CEO
BC636
BC638
BC640
V(BR)CBO
BC636
BC638
BC640
V(BR)EBO
ICBO
—
—
—
—
–100
–10
nAdc
µAdc
–45
–60
–80
–5.0
—
—
—
—
—
—
—
—
Vdc
–45
–60
–80
—
—
—
—
—
—
Vdc
Vdc
Collector – Base Breakdown Voltage
(IC = –100
µAdc,
IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0, TA = 125°C)
1. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
MOTOROLA [ MOTOROLA, INC ]
