MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC846ALT1/D
General Purpose Transistors
BC846ALT1,BLT1
BC847ALT1,
COLLECTOR
3
NPN Silicon
1
BASE
BLT1,CLT1 thru
BC850ALT1,BLT1,
CLT1
BC846, BC847 and BC848 are
Motorola Preferred Devices
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
BC846
65
80
6.0
100
BC847
BC850
45
50
6.0
100
BC848
BC849
30
30
5.0
100
2
EMITTER
Unit
V
V
V
mAdc
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
225
1.8
R
q
JA
PD
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
Max
Unit
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10
µA,
VEB = 0)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
Collector – Base Breakdown Voltage
(IC = 10
m
A)
Emitter – Base Breakdown Voltage
(IE = 1.0
m
A)
BC846A,B
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
BC846A,B
BC847A,B,C
BC848A,B,C, BC849A,B,C, BC850A,B,C
V(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
5.0
V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
ICBO
nA
µA
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
MOTOROLA [ MOTOROLA, INC ]
