MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by DAN222/D
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in
ultra high speed switching applications. This device is housed in the SOT–416/SC–90
package which is designed for low power surface mount applications, where board
space is at a premium.
•
Fast trr
•
Low CD
•
Available in 8 mm Tape and Reel
DAN222
SOT–416/SC–90 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODE
SURFACE MOUNT
3
2
1
CASE 463–01, STYLE 4
SOT–416/SC–90
MAXIMUM RATINGS
(TA = 25°C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
VRM
IF
IFM
IFSM(1)
Value
80
80
100
300
2.0
Unit
Vdc
Vdc
mAdc
mAdc
Adc
1
ANODE
2
CATHODE
3
DEVICE MARKING
DAN222 = N9
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
PD
TJ
Tstg
Max
150
150
– 55 ~ + 150
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
Characteristic
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
1. t = 1
µS
2. trr Test Circuit on following page.
Symbol
IR
VF
VR
CD
trr(2)
Condition
VR = 70 V
IF = 100 mA
IR = 100
µA
VR = 6.0 V, f = 1.0 MHz
IF = 5.0 mA, VR = 6.0 V, RL = 100
Ω,
Irr = 0.1 IR
Min
—
—
80
—
—
Max
0.1
1.2
—
3.5
4.0
Unit
µAdc
Vdc
Vdc
pF
ns
Thermal Clad is a trademark of the Bergquist Company
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
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