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MC33154P 参数 Datasheet PDF下载

MC33154P图片预览
型号: MC33154P
PDF下载: 下载PDF文件 查看货源
内容描述: 单IGBT大电流栅极驱动器 [SINGLE IGBT HIGH CURRENT GATE DRIVER]
分类和应用: 驱动器MOSFET驱动器栅极驱动程序和接口接口集成电路光电二极管双极性晶体管栅极驱动
文件页数/大小: 12 页 / 201 K
品牌: MOTOROLA [ MOTOROLA ]
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MC33154  
MAXIMUM RATINGS  
Rating  
Power Supply Voltage  
to V ; V KGND V  
Symbol  
Value  
Unit  
V
V
CC  
V
– V  
20  
20  
EE EE  
CC  
CC  
EE  
EE  
Kelvin Ground to V  
(Note 1)  
KGnd – V  
EE  
Input  
Current Sense Input  
V
V
EE  
–0.3 to V  
CC  
V
V
V
A
in  
V
–0.3 to V  
CS  
BD  
CC  
CC  
Fault Blanking/Desaturation Input  
V
–0.3 to V  
Gate Drive Output  
Source Current  
Sink Current  
I
O
4.0  
2.0  
1.0  
Diode Clamp Current  
Fault Output  
Source Current  
Sink Current  
I
mA  
FO  
25  
10  
Power Dissipation and Thermal Characteristics  
D Suffix SO–8 Package, Case 751  
Maximum Power Dissipation @ T = 50°C  
Thermal Resistance, Junction–to–Air  
P Suffix DIP–8 Package, Case 626  
P
0.56  
180  
W
°C/W  
A
D
R
θJA  
Maximum Power Dissipation @ T = 50°C  
P
D
1.0  
W
A
Thermal Resistance, Junction–to–Air  
Operating Junction Temperature  
Operating Ambient Temperature  
Storage Temperature Range  
R
100  
°C/W  
θJA  
T
150  
°C  
°C  
°C  
J
T
–40 to +85  
A
T
–65 to +150  
stg  
.
NOTES: 1. Kelvin Ground must always be between V  
and V  
EE  
CC  
2. ESD data available upon request.  
ELECTRICAL CHARACTERISTICS (V  
= 20 V, V  
= 0 V, Kelvin Gnd connected to V . For typical values  
EE EE  
CC  
T
= 25°C, for min/max values T is the operating ambient temperature range that applies [Note 1] unless otherwise noted.)  
A
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
INPUT  
Input Threshold Voltage  
V
High State (Logic 1) @ T = 25°C  
V
9.0  
7.0  
10.5  
11.6  
A
IH  
High State (Logic 1) @ T = –40 to +85°C  
A
Low State (Logic 0)  
V
4.5  
IL  
Input Current — High State (V = 10.5 V)  
IH  
I
I
100  
50  
500  
100  
µA  
IH  
IL  
Input Current — Low State (V = 4.5 V)  
IL  
GATE DRIVE OUTPUT  
Output Voltage  
V
Low State (I  
= 1.0 A)  
V
17  
2.0  
18  
2.5  
Sink  
High State (I  
OL  
= 2.0 A)  
V
OH  
Source  
Output Pull–Down Resistor  
R
100  
200  
kΩ  
PD  
FAULT OUTPUT  
Output Voltage  
V
Low State (I  
= 5.0 mA)  
V
17  
0.2  
18.3  
1.0  
Sink  
High State (I  
FL  
= 20 mA)  
V
FH  
Source  
SWITCHING CHARACTERISTICS  
Propagation Delay (50% Input to 50% Output C = 15 nF)  
L
Logic Input to Drive Output Rise  
Logic Input to Drive Output Fall  
ns  
t
t
200  
120  
300  
300  
PLH (in/out)  
PHL (in/out)  
Drive Output Rise Time (10% to 90%) C = 15 nF  
t
80  
80  
200  
200  
ns  
ns  
µs  
L
r
Drive Output Fall Time (90% to 10%) C = 15 nF  
L
t
f
Propagation Delay  
Current Sense Input to Drive Output  
t
0.4  
1.0  
P(OC)  
NOTE: 1. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.  
= –40°C for MC33154 = +85°C for MC33154  
T
T
high  
low  
2
MOTOROLA ANALOG IC DEVICE DATA