MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBD7000LT1/D
Dual Switching Diode
MMBD7000LT1
Motorola Preferred Device
1
ANODE
3
CATHODE/ANODE
2
CATHODE
3
1
2
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
100
200
500
Unit
Vdc
mAdc
mAdc
CASE 318 – 08, STYLE 11
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
MMBD7000LT1 = M5C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100
µAdc)
Reverse Voltage Leakage Current
(VR = 50 Vdc)
(VR = 100 Vdc)
(VR = 50 Vdc, 125°C)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
Capacitance (VR = 0 V)
1. FR– 5 = 1.0
0.75
2. Alumina = 0.4
0.3
V(BR)
IR
IR2
IR3
VF
0.55
0.67
0.75
trr
C
—
—
0.7
0.82
1.1
4.0
1.5
ns
pF
100
—
—
—
—
1.0
3.0
100
Vdc
Vdc
µAdc
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1
MOTOROLA [ MOTOROLA, INC ]
