MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBD914LT1/D
High-Speed Switching Diode
3
CATHODE
1
ANODE
MMBD914LT1
Motorola Preferred Device
3
1
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
100
200
500
Unit
Vdc
mAdc
mAdc
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
MMBD914LT1 = 5D
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100
m
Adc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 10 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
1. FR– 5 = 1.0
0.75
2. Alumina = 0.4
0.3
V(BR)
IR
—
—
CT
VF
trr
—
—
—
25
5.0
4.0
1.0
4.0
nAdc
m
Adc
pF
Vdc
ns
100
—
Vdc
0.062 in.
0.024 in. 99.5% alumina.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1
MOTOROLA [ MOTOROLA, INC ]
