MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2907LT1/D
General Purpose Transistors
PNP Silicon
1
BASE
COLLECTOR
3
MMBT2907LT1
MMBT2907ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
2907
–40
–60
–5.0
–600
2
EMITTER
1
3
2907A
–60
Unit
Vdc
Vdc
Vdc
mAdc
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
MMBT2907LT1 = M2B; MMBT2907ALT1 = 2F
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = –10
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage (IE = –10
m
Adc, IC = 0)
Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
IB
V(BR)CEO
MMBT2907
MMBT2907A
V(BR)CBO
V(BR)EBO
ICEX
ICBO
—
—
—
—
—
–0.020
–0.010
–20
–10
–50
nAdc
–40
–60
–60
–5.0
—
—
—
—
—
–50
Vdc
Vdc
nAdc
µAdc
Vdc
(VCB = –50 Vdc, IE = 0, TA = 125°C)
Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
v
v
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
MOTOROLA [ MOTOROLA, INC ]
