MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT3906LT1/D
General Purpose Transistor
PNP Silicon
1
BASE
COLLECTOR
3
MMBT3906LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
–40
–40
–5.0
–200
2
EMITTER
1
3
Unit
Vdc
Vdc
Vdc
mAdc
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
MMBT3906LT1 = 2A
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10
m
Adc, IC = 0)
Base Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO
–40
V(BR)CBO
–40
V(BR)EBO
–5.0
IBL
—
ICEX
—
–50
–50
—
—
—
Vdc
Vdc
Vdc
nAdc
nAdc
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
MOTOROLA [ MOTOROLA, INC ]
