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MMBTA56LT1 参数 Datasheet PDF下载

MMBTA56LT1图片预览
型号: MMBTA56LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 驱动晶体管 [Driver Transistors]
分类和应用: 晶体小信号双极晶体管驱动
文件页数/大小: 4 页 / 81 K
品牌: MOTOROLA [ MOTOROLA, INC ]
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA55LT1/D
Driver Transistors
PNP Silicon
1
BASE
COLLECTOR
3
MMBTA55LT1
MMBTA56LT1
*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBTA55
–60
–60
–4.0
–500
MMBTA56
–80
–80
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
Characteristic
Symbol
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage (IE = –100
m
Adc, IC = 0)
Collector Cutoff Current (VCE = –60 Vdc, IB = 0)
Collector Cutoff Current (VCB = –60 Vdc, IE = 0)
Collector Cutoff Current
(VCB = –80 Vdc, IE = 0)
MMBTA55
MMBTA56
MMBTA55
MMBTA56
V(BR)CEO
V(BR)EBO
ICES
ICBO
–60
–80
–4.0
–0.1
–0.1
–0.1
Vdc
Vdc
µAdc
µAdc
ON CHARACTERISTICS
DC Current Gain (IC = –10 mAdc, VCE = –1.0 Vdc)
DC Current Gain
(IC = –100 mAdc, VCE = –1.0 Vdc)
Collector – Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc)
Base–Emitter On Voltage (IC = –100 mAdc, VCE = –1.0 Vdc)
hFE
VCE(sat)
VBE(on)
fT
100
100
–0.25
–1.2
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(4)
(IC = –100 mAdc, VCE = –1.0 Vdc, f = 100 MHz)
1.
2.
3.
4.
FR–5 = 1.0 x 0.75 x 0.062 in.
Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Pulse Test: Pulse Width
300
µs,
Duty Cycle
2.0%.
fT is defined as the frequency at which |hfe| extrapolates to unity.
50
MHz
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1