MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA92LT1/D
High Voltage Transistors
PNP Silicon
1
BASE
COLLECTOR
3
MMBTA92LT1
*
MMBTA93LT1
*Motorola Preferred Device
2
EMITTER
3
1
2
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBTA92
–300
–300
–5.0
–500
MMBTA93
–200
–200
–5.0
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –100
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
(VCB = –160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO
MMBTA92
MMBTA93
V(BR)CBO
MMBTA92
MMBTA93
V(BR)EBO
ICBO
MMBTA92
MMBTA93
IEBO
—
—
—
–0.25
–0.25
–0.1
–300
–200
–5.0
—
—
—
–300
–200
—
—
Vdc
Vdc
Vdc
µAdc
µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
MOTOROLA [ MOTOROLA, INC ]
