MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSA05/D
Amplifier Transistors
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
COLLECTOR
3
NPN
MPSA05
MPSA06*
PNP
MPSA55
MPSA56*
Voltage and current are negative
for PNP transistors
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current – Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPSA05
MPSA55
60
60
4.0
500
625
5.0
1.5
12
– 55 to +150
MPSA06
MPSA56
80
80
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA(1)
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = 100
µAdc,
IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
MPSA05, MPSA55
MPSA06, MPSA56
V(BR)CEO
MPSA05, MPSA55
MPSA06, MPSA56
V(BR)EBO
ICES
ICBO
—
—
0.1
0.1
60
80
4.0
—
—
—
—
0.1
Vdc
µAdc
µAdc
Vdc
1. R
q
JA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
v
v
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
MOTOROLA [ MOTOROLA, INC ]
