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MA4TD0410T 参数 Datasheet PDF下载

MA4TD0410T图片预览
型号: MA4TD0410T
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 46 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
 浏览型号MA4TD0410T的Datasheet PDF文件第2页浏览型号MA4TD0410T的Datasheet PDF文件第3页  
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
Cascadable 50Ω Gain Block
3dB Bandwidth: DC to 3.0 GHz
9.0 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
RF INPUT
.040
1,02
MP4TD0410
Gold-Ceramic Microstrip Package Outline
1,2
4
GND
RF OUT
AND BIAS
3
.020
0,51
Description
M-Pulse's MP4TD0410 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package for surface mount usage. The MP4TD0410 is
useful where a general purpose 50Ω gain block with
moderate (+16 dBm) gain compression is required.
Typical applications include narrow and wide band IF
and RF amplifiers in industrial and military applications.
The MP4TD0410 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
10
9
8
7
GAIN (dB)
6
5
4
3
2
1
0
0 .1
1
F R E Q U E N C Y (G H z)
10
Id= 5 0 m A
1
2
GND
.100
.004 ±.002
0,1 ±0,05
2,54
.035
0,89
.495 ±.030
12,57 ±0,76
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±.005;
mm .xx =
±.13
Pin Configuration
Pin Number
Pin Description
1
RF Input
2&4
AC/DC Ground
3
RF Output and DC Bias
Ordering Information
Model No.
Package
MA4TD0410
Hermetic Ceramic
MA4TD0410T
Tape and Reel
Electrical Specifications @ T
A
= +25°C, Id = 50 mA, Z0 = 50Ω
Symbol
Parameters
Test Conditions
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
Gain Flatness
f = 0.1 to 2.0 GHz
ΔGp
f
3 dB
3 dB Bandwidth
-
SWR
in
Input SWR
f = 0.1 to 3.0 GHz
SWR
out
Output SWR
f = 0.1 to 3.0 GHz
P
1dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
NF
f = 1.0 GHz
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
f = 1.0 GHz
t
D
Group Delay
f = 1.0 GHz
V
d
Device Voltage
-
dV/dT
Device Voltage Temperature Coefficient
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
8.0
-
-
-
-
-
-
-
-
4.75
-
Typ.
9.0
±0.6
3.0
1.5
1.6
12.5
6.2
25.5
125
5.25
-8.0
Max.
9.5
±1.0
-
-
-
-
-
-
-
5.75
-
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
1
FX (408) 432-3440