Silicon Bipolar Low Noise
Microwave Transistors
Features
•
Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz)
•
High Power Gain At 1.0 GHz – 18.0 dB Typical
•
Gold Metalization
•
Hermetic and Surface Mount Packages Available
•
Can be Screened to JANTX, JANTXV Equivalent Levels
•
ION Implanted arsenic Emitter for Consistent Performance
MP42141
Case Styles
Description
This NPN Silicon transistor finds applications in low
noise and medium power microwave amplifier circuitry.
The MP42141 exhibits an excellent noise figure
characteristic over the frequency range of .5 to 2 GHz.
This transistor also features good high frequency current
gain at medium current levels.
Applications
RF amplifiers and low level oscillators.
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
