Bipolar High fT Low Voltage
NPN Silicon Transistors
Features
•
Designed for 3-5 Volt Operation
•
Useable to 6 GHz in Oscillators
•
Useable for Low Noise, Low Voltage Driver Amplifiers
Through 3 GHz
•
Useful for Class C Amplifiers
•
Available as Chips and in Hermetic and Surface
Mount Packages
•
Can be Screened to JANTX, JANTXV Equivalent Levels
(ceramic pacakges)
•
Tape and Reel Packaging Available for packaged
devices.
MP4T3243 Series
V4.00
Case Style
SOT-23
Description
The MP4T3243 series of high f
T
low voltage NPN medium
power silicon bipolar transistors is designed for usage in
battery operated systems with 3-5 volt collector bias. They
are useful as low phase noise oscillator transistors through 6
GHz and as moderate power driver amplifiers through 3
GHz.
These transistors are available as chips for hybrid oscillators
or in ceramic packages for military or commercial usage.
Both the chips and hermetic packages can be screened to
JANTX equivalent levels.
These transistors use high temperature gold, platinum,
titanium metalization with silicon dioxide and silicon nitride
passivation. The chip is emitter ballasted with polysilicon
resistors to prevent current concentration at high current
operation.
Chip
Micro-X
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
