3 Volt, Low Noise High fT Silicon Transistor
Typical Performance Curves (MP4T631035)
MP4T6310 Series
POWER DERATING CURVES
80
70
POWER DISSIPATION (mW)
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
A M B I E N T T E M P E R A T U R E (C )
M P4T631033, 39
(S O T -2 3 , 1 4 3 ) F R E E A I R
M P 4 T 6 3 1 0 3 5 (M IC R O -X )
M P4T 63100 0 (C H IP ) O N IN FIN IT E H E A T SIN K
NOISE FIGURE and ASSOCIATED GAIN at
VCE = 3 V, 1 GHz vs COLLECTOR CURRENT
16
14
NOISE FIGURE (dB)
ASSOCIATED GAIN (dB)
12
10
8
6
4
2
0
0.1
1
ASSOC IATE D GAIN
N O ISE FIGU R E
10
C O LLE C TO R C U R R E N T (mA )
GAIN vs FREQUENCY at VCE=3 V and IC =
4 mA
16
COLL.-BASE CAPACITANCE (pF)
COLLECTOR-BASE CAPACITANCE (C
OB
)
vs COLLECTOR-BASE VOLTAGE
0.6
0.5
0.4
0.3
0.2
0.1
0
14
12
GAIN (dB)
10
8
6
4
2
1
F R E Q U E N C Y (G H z)
10
|S
2 1E
|
2
GT U (M AX )
1
C O LL EC T OR -B ASE VO LTA GE (Vo lts)
10
GAIN BANDWIDTH PRODUCT (fT ) vs
COLLECTOR CURRENT at VCE=3 V
15
GAIN BANDWIDTH (GHz)
14
13
12
11
10
9
8
1
C O L L E C T O R C U R R E N T (m A)
10
GAIN (dB)
GAIN vs COLLECTOR CURRENT at 3 GHz,
VCE=3 V
8
7
6
5
4
3
2
1
C O LL EC T OR C U R R EN T (mA)
10
M AG
GT U (M AX )
|S
21 E
|
2
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
