Low OperatingVoltage, High f
T
Bipolar Microwave Transistors
Features
•Designed
for Battery Operation
•f
T
to 10 GHz
•Low
Voltage Oscillator and Amplifier
•Low
Phase Noise and Noise Figure
•Hermetic
and Surface Mount Packages and
Chips Av ailable
•Can
be Screened to JANTX, JANTXV Equiv alent Lev els
Description
The MP4T6365 family of low v oltage, high gain band-
width silicon NPN bipolar transistors prov ides low noise
figure and high gain at low bias v oltages. These transis-
tors are especially attractiv e for low operating v oltage
low noise amplifiers or driv er amplifiers at frequencies
to 4 GHz. They are also useful for low phase noise local
oscillators and VCOs in battery operated equipment to
10 GHz.
The MP4T6365 family was designed to hav e low noise
figure at operating v oltages as low as 3 v olts. These
transistors also exhibit low phase noise in VCOs
operating at 5 v olts or less.
Because this transistor family was specifically designed
to perate from low bias v oltage, it has superior phase
noise in comparison to similar current bipolar transistors
with higher collector breakdown v oltage when operating
under the same low v oltage conditions.
The MP4T6365 series transistors are av ailable in
hermetic Micro-X packages, the SOT-23, the SOT-143,
and in chip form (MP4T636500). Other stripline and
hermetic packages are av ailable.
The chip and
hermetic packages can be screened to JANTX, JANTXV
equiv alent lev els. The plastic parts can be supplied on
tape and reel.
All of M-Pulse’ silicon bipolar transistor families use
s
silicon dioxide and silicon nitride passiv ation to assure
low 1/F noise for amplifier and oscillator applications.
MP4T6365
V2.00
Case Styles
SOT-23
SOT-143
Chip
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
