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MP4T64535 参数 Datasheet PDF下载

MP4T64535图片预览
型号: MP4T64535
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极高的fT低噪声微波晶体管 [Silicon Bipolar High fT Low Noise Microwave Transistors]
分类和应用: 晶体晶体管微波
文件页数/大小: 8 页 / 103 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
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Silicon Bipolar High f
T
Low Noise
Microwave Transistors
Features
•f
T
to 9 GHz
•Low
Noise Figure
•High
Associated Gain
•Hermetic
and Surface Mount Packages Av ailable
•Can
be Screened to JANTX, JANTXV Equiv alent Lev els
•Industry
Standard
MP4T645
Case Styles
Description
The MP4T645 family of high gain-bandwidth, small
signal silicon bipolar transistors is well suited for use in
amplifiers to approximately 4 GHz, and in oscillators to
approximately 10 GHz. These industry standard transis-
tors freature low noise figure at high collector current,
which produces v ery good associated gain and wide
dynamic range. The MP4T645 series transistors are
av ailable
in
a
hermetic
microstrip
package
(MP4T64535), in the plastic SOT-23 package
(MP4T64533), in chip form (MP4T64500), and in the
SOT-143 package (MP4T64539). The MP4T645 series
is av ailable in other plastic and hermetic packages as
well. The chip and hermetically packaged transistors
can be screened to a JANTXV equiv alent lev el.
SOT-23
SOT-143
Chip
Applications
The MP4T645 family of bipolar NPN transistors can be
used for low noise, high associated gain. large dynamic
range amplifiers up to approximately 4 GHz. These
transistors can also be used as preamplifier or driv er
stages in the same frequency range.
The MP4T645 family of bipolar NPN transistors can also
be used for oscillators or VCOs up to approximately 10
GHz.
The passiv ation consists of silicon dioxide,
commonly known as thermal oxide, and silicon nitride to
produce v ery low 1/f noise in both amplifiers and
oscillators.
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440