3 Volt, General Purpose Low Noise High f Silicon Transistor
T
MP4T6325 Series
Electrical Specifications at 25°C
Symbol
Parameters
Test
Units MP4T632500 MP4T632533 MP4T632535 MP4T632539
Conditions
VCE = 3V
IC = 10 mA
VCE = 3V
IC = 10 mA
f = 1 GHz
f = 2 GHz
VCE = 3V
IC = 2 mA
f = 1 GHz
VCE = 3V
IC = 10 mA
f = 1 GHz
f = 2 GHz
VCE = 3V
IC = 10 mA
f = 2 GHz
VCE = 3V
IC = 15 mA
f = 900MHz
Junction/
Ambient
Chip
SOT-23
Micro-X
SOT-143
f
Gain Bandwidth
Product
GHz
dB
11 typ.
10 typ.
11 typ.
11 typ.
T
2
|S21E
|
Insertion Power
Gain
12 typ.
8 typ.
11 typ.
7 typ.
12 typ.
8 typ.
11 typ.
7 typ.
NF
Noise Figure
dB
dB
1.5 typ.
1.6 typ.
1.5 typ.
1.6 typ.
GTU (max) Unilateral Gain
14.5 typ.
9 typ.
13 typ.
8 typ.
14.5 typ.
9 typ.
13 typ.
8 typ.
MAG
P1dB
Maximum
dB
Available Gain
10 typ.
8 typ.
9 typ.
10 typ.
9 typ.
Power Out at 1dB
Compression
dBm
8 typ.
650 typ.
8 typ.
500 typ.
8 typ.
625 typ.
RTH (J-A)
RTH (J-C)
Thermal
°C/W
°C/W
Resistance
Thermal
Junction/
Case
70 max. 1
200 typ.
200 typ.
200 typ.
Resistance
1. Junction/Heat Sink RTH (J-C)
Maximum Ratings at 25°C
Parameter
Symbol
Maximum Rating
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
8 V
6 V
1.5 V
25 mA
200°C
Junction Temperature
Tj
Storage Temperature
Chips or Ceramic Packages
Plastic Packages
TSTG
PD
-65°C to +200°C
-65°C to +125°C
150mW1
Power Dissiapation
1. See Typical Performance Curves for power derating.
Electrical Specifications at 25°C
Parameters
Conditions
VCB = 5 V
IE = 0
Symbol
Min.
Typ.
Max.
Units
Collector Cut-off Current
ICBO
IEBO
hFE
100
nA
Emitter Cut-off Current
Forward Current Gain
VEB = 1 V
IC = 0
1
µA
VCE = 3 V
IC = 3 mA
VCB = 3 V
IE = 0
20
90
200
0.70
Collector Base
COB
0.52
pF
Junction Capacitance
f = 1 MHz
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
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MPLUSE [ M-PULSE MICROWAVE INC. ]
