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MP4TD0335T 参数 Datasheet PDF下载

MP4TD0335T图片预览
型号: MP4TD0335T
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 49 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
 浏览型号MP4TD0335T的Datasheet PDF文件第2页浏览型号MP4TD0335T的Datasheet PDF文件第3页  
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
Cascadable 50Ω Gain Block
3dB Bandwidth: DC to 2.0 GHz
12.1 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
MP4TD0335, MP4TD0336
Ceramic Microstrip Case Style Outlines
1,2,3
Available in short lead version as MP4TD0336.
4
.085
2,15
RF OUT
AND BIAS
3
.020
0,508
GND
RF INPUT
1
Description
M-Pulses’s MP4TD0335 and MP4TD0336 are high
performance silicon bipolar MMICs housed in a cost
effective ceramic microstrip packages. The MP4TD0335
and MP4TD0336 are designed for use where a general
purpose 50Ω gain block is required. Typical applications
include narrow and wide band IF and RF amplifiers in
industrial and military applications.
The MP4TD0335 and MP4TD0336 are fabricated using
a 10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased
performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
14
12
10
GAIN (dB)
8
6
4
2
G AIN FL AT to D C
0
0.01
0.1
FR E QU E N C Y (GH z)
1
10
Id=35m A
2
GND
.100
2,54
ø .083
2,11
.057
1,45
.455 ±.030
11,54 ±0,76
0.180±0.010
4.57 ±0,25
MA4TD0336
.022
0,56
.006 ±.002
0,15 ±0,05
MA4TD0335
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±.005;
mm .xx =
±.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
1
2&4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Electrical Specifications @ T
A
= +25°C, Id = 35 mA, Z0 = 50Ω
Symbol
Parameters
Test Conditions
Gp
f = 0.1 GHz
Power Gain (⏐S21
2)
Gain Flatness
f = 0.1 to 1.6 GHz
ΔGp
f
3dB
3 dB Bandwidth
-
SWR
in
Input SWR
f = 0.1 to 3.0 GHz
SWR
out
Output SWR
f = 0.1 to 3.0 GHz
P
1dB
Output Power @ 1dB Gain Compression
f = 1.0 GHz
NF
f = 1.0 GHz
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
f = 1.0 GHz
t
D
Group Delay
f = 1.0 GHz
V
d
Device Voltage
-
dV/dT
Device Voltage Temperature Coefficient
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
12.0
-
-
-
-
-
-
-
-
4.5
-
Typ.
13.0
+ 0.8
2.0
1.6
1.5
10.0
5.5
23.0
125
5.0
-8.0
Max.
14.0
+ 1.1
-
-
-
-
-
-
-
5.5
-
Specification Subject to Change Without Notice
M-Pulse Microwave
Tel. (408) 432-1480
FX. (408) 432-3440
__________________________________________________________________________
1