M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
•
Cascadable 50Ω Gain Block
•
3dB Bandwidth: DC to 3.0 GHz
•
9.0 dB Typical Gain @ 1.0 GHz
•
Unconditionally Stable (k>1)
•
Cost Effective Ceramic Microstrip Package
•
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0435 and MP4TD0436 are high
performance silicon bipolar MMICs housed in cost effective
ceramic microstrip packages.
The MP4TD0435 and
MP4TD0436 are designed for use where a general purpose
50Ω gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial and
military applications.
The MP4TD0435 and MP4TD0436 are fabricated using a
10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased performance
and reliability.
MP4TD0435, MP4TD0436
Ceramic Microstrip Case Style Outlines
1,2,3
Available in short lead version as MA4TD0436.
4
.085
2,16
RF OUT
AND BIAS
3
.020
0,508
GND
RF INPUT
1
2
GND
.100
2,54
ø .083
2,11
.057
1,45
.455 ±.030
11,54 ±0,76
0.180 ±0.010
4,57 ±0,25 MA4TD0436
.022
0,56
TYPICAL POWER GAIN vs FREQUENCY
10
9
8
7
GAIN (dB)
6
5
4
3
2
1
0
0 .1
1
F R E Q U E N C Y (G H z)
10
G ain F lat to D C
Id = 5 0 m A
.006 ±.002
0,15 ±0,05
MA4TD0435
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±.005;
mm .xx =
±.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
1
2&4
3
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Min.
7.5
-
-
-
-
-
-
-
-
4.75
-
Typ.
9.0
+ 0.5
3.0
1.5
1.6
12.5
6.2
25.5
125
5.25
-8.0
Max.
9.5
+ 1.0
-
-
-
-
-
-
-
5.75
-
Electrical Specifications @ T
A
= +25°C, Id = 50 mA, Z0 = 50Ω
Symbol
Parameters
Test Conditions
Gp
f = 0.1 GHz
Power Gain (⏐S21
⏐
2)
Gain Flatness
f = 0.1 to 2.0 GHz
ΔGp
f
3dB
3 dB Bandwidth
-
SWR
in
Input SWR
f = 0.1 to 2.0 GHz
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
P
1dB
Output Power @ 1dB Gain Compression
f = 1.0 GHz
NF
f = 1.0 GHz
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
f = 1.0 GHz
t
D
Group Delay
f = 1.0 GHz
V
d
Device Voltage
-
dV/dT
Device Voltage Temperature Coefficient
-
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
1
FX (408) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
