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MP4TD0700G 参数 Datasheet PDF下载

MP4TD0700G图片预览
型号: MP4TD0700G
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 129 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
 浏览型号MP4TD0700G的Datasheet PDF文件第2页浏览型号MP4TD0700G的Datasheet PDF文件第3页  
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
Cascadable 50Ω Gain Block
• Low Operating Voltage (4.0 V Typical Vd)
3dB Bandwidth: DC to 2.0 GHz
11.5 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Chip Outline
Drawing
1,2,3,4
RF Input
Optional +15 Volts
Optional +12 Volts
MP4TD0700
V4.00
Description
M-Pulse's MP4TD0700 is a high performance silicon
bipolar MMIC chip. The MP4TD0700 is designed for
use where a general purpose 50Ω gain block is required.
Typical applications include narrow and wide band IF
and RF amplifiers in industrial and military applications.
The MP4TD0700 is fabricated using a 10 GHz f T silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
375
µ
(14.8 mil)
Ground
Optional RF Output & +4.0 Volts
375
µ
(14.8 mil)
Optional +5 Volts
14
12
10
GAIN (dB)
8
6
4
2
0
TYPICAL POWER GAIN vs FREQUENCY
Id = 22 m A
Notes:
(unless otherwise specified)
1. Chip Thickness is 120
µm;
4.8 mils
2. Bond Pads are 40
µm;
1.6 mils typical in diameter
3. Output Contact & +DC Voltage Is Normally Made On
Backside Of Chip At Die Attach
4. Tolerance:µm .xx =
±.13;
mil .x =
±.5
Ordering Information
Model No.
MP4TD0700G
MP4TD0700W
G ain F lat to D C
0 .1
1
FR E Q U E N C Y (G H z)
10
Type of Carrier
GEL PACK
Waffle Pack
Electrical Specifications @ T
A
= +25°C, Id = 22 mA; Z0 = 50Ω
Symbol
Parameters
Test Conditions
Gp
f = 0.1 GHz
Power Gain (S21
2)
Gain Flatness
f = 0.1 to 1.0 GHz
∆Gp
f
3dB
3 dB Bandwidth
-
SWR
in
Input SWR
f = 0.1 to 2.0 GHz
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
P
1dB
Output Power @ 1dB Gain Compression
f = 1.0 GHz
NF
f = 1.0 GHz
50
Noise Figure
IP
3
Third Order Intercept Point
f = 1.0 GHz
t
D
Group Delay
f = 1.0 GHz
V
d
Device Voltage
-
dV/dT
Device Voltage Temperature Coefficient
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
-
-
-
-
-
-
-
-
-
3.6
-
Typ.
13.5
+ 0.6
1.5
1.6
1.5
5.5
4.5
19.0
140
4.0
-7.0
Max.
-
-
-
-
-
-
-
-
-
4.4
-
Specification Subject to Change Without Notice
M-Pulse Microwave
1
PH (408) 432-1480
__________________________________________________________________________________
FX (408) 432-3440