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MP4TD0835 参数 Datasheet PDF下载

MP4TD0835图片预览
型号: MP4TD0835
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 50 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
 浏览型号MP4TD0835的Datasheet PDF文件第2页浏览型号MP4TD0835的Datasheet PDF文件第3页  
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
Cascadable 50Ω Gain Block
High Gain: 32.5 dB Typical Gain @ 0.1 GHz
18.5 dB Typical Gain @ 1.0 GHz
Low Noise Figure: 3.2 dB Typical @ 1.0 GHz
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
Unconditionally Stable @ k>1
Description
M-Pulse's MP4TD0835 and MP4TD0836 are high
performance silicon bipolar MMIC housed in a cost
effective ceramic microstrip package. The MP4TD0835
and MP4TD0836 are designed for use where a low
noise (3.2 dB typical) general purpose 50Ω gain block is
required. Typical applications include narrow and wide
band IF and RF amplifiers in industrial and military
applications.
The MP4TD0835 and MP4TD0836 are fabricated using
a 10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased
performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
35
30
Id= 3 6 m A
25
20
15
10
5
0
0 .1
1
F R E Q U E N C Y (G H z)
10
MP4TD0835, MP4TD0836
Ceramic Microstrip Package Outline
1,2,3
Available in short lead version as MP4TD0836.
4
.085
2,16
RF INPUT
1
RF OUT
AND BIAS
3
.020
0,51
GND
2
GND
.100
2,55
ø .083
2,11
.057
1,45
.006
±.002
0,15±0,05
.455 ±.030
1,56 ±0,76 MA4TD0835
0.018 ±0.010
4,57 ±0,25 MA4TD0836
.022
0,56
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±.005;
mm .xx =
±.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
Pin Description
1
RF Input
2&4
AC/DC Ground
3
RF Output and DC Bias
Electrical Specifications @ T
A
= +25°C, Id = 36 mA, Z0 = 50
Ω
Symbol
Parameters
Test Conditions
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
f = 1.0 GHz
f = 4.0 GHz
SWR
in
Input SWR
f = 0.3 to 3.0 GHz
SWR
out
Output SWR
f = 0.4 to 3.0 GHz
P
1 dB
Output Power @ 1 dB Gain Compression f = 1.0 GHz
NF
f = 1.0 GHz
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
f = 1.0 GHz
t
D
Group Delay
f = 1.0 GHz
V
d
Device Voltage
-
dV/dT
Device Voltage Temperature Coefficient
-
GAIN (dB)
Units
dB
dB
dB
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
-
17.5
-
-
-
-
-
-
-
7.0
-
Typ.
32.5
18.5
7.0
2.0
1.5
13.5
3.2
27.0
125
7.8
-17.0
Max.
-
19.0
-
-
-
-
-
-
-
8.4
-
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
1
FX (408) 432-3440