欢迎访问ic37.com |
会员登录 免费注册
发布采购

MP4TD0935T 参数 Datasheet PDF下载

MP4TD0935T图片预览
型号: MP4TD0935T
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 51 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
 浏览型号MP4TD0935T的Datasheet PDF文件第2页浏览型号MP4TD0935T的Datasheet PDF文件第3页  
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
Cascadable 50Ω Gain Block
3dB Bandwidth: DC to 4.5 GHz
8.0 dB Typical Gain @ 1.0 GHz
MP4TD0935, MP4TD0936
Ceramic Microstrip Case Style Outlines
1,2,3
Available in short lead version as MP4TD0936.
4
.085
2,15
RF OUT
AND BIAS
3
.020
0,508
GND
Low SWR: <1.9 from 0.1 to 3.0 GHz
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
RF INPUT
Description
M-Pulse's MP4TD0935 and MP4TD0936 are high
performance silicon bipolar MMICs housed in a cost
effective ceramic microstrip packages. The MP4TD0935
and MP4TD0936 are designed for use where a general
purpose 50Ω gain block is required. Typical applications
include narrow and wide band IF and RF amplifiers in
industrial and military applications.
The MP4TD0935 and MP4TD0936 are fabricated using a
10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased performance
and reliability.
1
2
GND
.100
2,54
ø .083
2,11
.057
1,45
.455 ±.030
11,54 ±0,76
0.180±0.010
4.57 ±0,25
MA4TD0936
.022
0,56
TYPICAL POWER GAIN vs FREQUENCY
12
10
8
6
4
2
0
0 .1
1
F R E Q U E N C Y (G H z)
10
Id= 3 5 m A
.006 ±.002
0,15 ±0,05
MA4TD0935
GAIN (dB)
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±.005;
mm .xx =
±.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
1
2&4
3
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Min.
7.0
-
-
-
-
-
-
-
-
7.0
-
Typ.
8.0
+ 0.4
4.5
1.9
1.4
11.5
6.0
23.0
100
7.8
-16.0
Max.
9.0
+ 0.6
-
-
-
-
-
-
-
8.6
-
Electrical Specifications @ T
A
= +25°C, Id = 35 mA, Z0 = 50Ω
Symbol
Parameters
Test Conditions
Gp
f = 0.1 GHz
Power Gain (⏐S21
2)
Gain Flatness
f = 0.1 to 3.0 GHz
ΔGp
f
3dB
3 dB Bandwidth
-
SWR
in
Input SWR
f = 0.1 to 3.0 GHz
SWR
out
Output SWR
f = 0.1 to 3.0 GHz
P
1dB
Output Power @ 1dB Gain Compression
f = 1.0 GHz
NF
f = 1.0 GHz
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
f = 1.0 GHz
t
D
Group Delay
f = 1.0 GHz
V
d
Device Voltage
-
dV/dT
Device Voltage Temperature Coefficient
-
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
1
FX (408) 432-3440