Silicon Bipolar MMIC Cascadable Amplifier
Absolute Maximum Ratings1
MP4TD0935, MP4TD0936
Typical Bias Configuration
Parameter
Absolute Maximum
Rbias
Device Current
Power Dissipation2,3
RF Input Power
80 mA
750 mW
+20 dBm
Vcc > 10 V
Vcc - Vd
Rbias
Id =
Junction Temperature
Storage Temperature
200°C
-65°C to +200°C
RFC (Optional)
C (DC Block)
4
Thermal Resistance: θjc = 145°C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25 °C.
C (DC Block)
3
MP4TD0935
MP4TD0936
OUT
IN
3. Derate at 6.9 mW/°C for Tc > 91°C.
1
Vd = 7.8 V
2
Typical Performance Curves @ I = 35 mA, T = +25°C (unless otherwise noted)
d
A
DEVICE CURRENT vs DEVICE VOLTAGE
RETURN LOSS vs FREQUENCY
60
50
40
30
20
10
0
0
-5
-10
-15
-20
-25
Input
O utput
0
2
4
6
8
10
0.1
1
10
Vd, DEVICE VO LTAGE (V)
FREQUENCY (GH z)
POUT @ -1dB GAIN COMPRESSION
vs FREQUENCY
POWER GAIN vs CURRENT
16
14
12
10
8
9
8
7
6
5
4
Id=45mA
Id=35mA
Id=25mA
f=0.1 GH z
f=2.0 GH z
6
4
2
0
10
20
30
40
50
0.1
1
10
Id, DEVICE CU RRENT (mA)
FREQUENCY (GHz)
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
2
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