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MP4TD0970 参数 Datasheet PDF下载

MP4TD0970图片预览
型号: MP4TD0970
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 48 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
 浏览型号MP4TD0970的Datasheet PDF文件第2页浏览型号MP4TD0970的Datasheet PDF文件第3页  
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
Cascadable 50Ω Gain Block
3dB Bandwidth: DC to 4.5 GHz
8.0 dB Typical Gain @ 1.0 GHz
Low VSWR: <1.5:1 from 0.1 to 3.0 GHz
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
RF INPUT
.040
1,02
MP4TD0970
Gold-Ceramic Microstrip Package Outline
1,2
4
GND
RF OUT
AND BIAS
3
.020
0,51
Description
M-Pulse's MP4TD0970 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
stripline package. The MP4TD0970 is designed to use
where a general purpose broad band (4.5 GHz) 50Ω
gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial
and military applications.
The MP4TD0970 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
12
10
8
GAIN (dB)
6
4
2
0
0 .1
1
F R E Q U E N C Y (G H z)
10
Id= 3 5 m A
1
2
GND
.070
.004 ±.002
0,1±0,05
1,78
.035
0,89
.495 ±.030
12,57 ±0,76
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±.005;
mm .xx =
±.13
Pin Configuration
Pin Number
Pin Description
1
RF Input
2&4
AC/DC Ground
3
RF Output and DC Bias
Ordering Information
Model No.
Package
MP4TD0970
Ceramic
MP4TD0970T
Tape and Reel
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
7.0
-
-
-
-
-
-
-
-
7.0
-
Typ.
8.0
±0.4
4.5
1.9
1.4
11.5
6.0
23.0
100
7.8
-16.0
Max.
9.0
±0.6
-
-
-
-
-
-
-
8.6
-
Electrical Specifications @ T
A
= +25°C, Id = 35 mA, Z0 = 50Ω
Symbol
Parameters
Test Conditions
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
Gain Flatness
f = 0.1 to 3.0 GHz
ΔGp
f
3 dB
3 dB Bandwidth
-
SWR
in
Input SWR
f = 0.1 to 3.0 GHz
SWR
out
Output SWR
f = 0.1 to 3.0 GHz
P
1dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
NF
f = 1.0 GHz
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
f = 1.0 GHz
t
D
Group Delay
f = 1.0 GHz
V
d
Device Voltage
-
dV/dT
Device Voltage Temperature Coefficient
-
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
1
FX (408) 432-3440