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MP4TD1100G 参数 Datasheet PDF下载

MP4TD1100G图片预览
型号: MP4TD1100G
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 3 页 / 142 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
 浏览型号MP4TD1100G的Datasheet PDF文件第2页浏览型号MP4TD1100G的Datasheet PDF文件第3页  
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
High Dynamic Range Cascadable
50Ω/75Ω Gain Block
3dB Bandwidth: 50 MHz to 1.0 GHz
17.5 dBm Typical P
1dB
@ 0.7 Ghz
11 dB Typical Gain @ 0.5 GHz
3.5 dB Typical Noise Figure @ 1.0 GHz
RF Input
MP4TD1100
Chip Outline Drawing1,2,3,4
Description
M-Pulse's MP4TD1100 is a high performance silicon
bipolar MMIC chip. The MP4TD1100 is designed for
use in 50Ω or 75Ω systems where a high dynamic range
gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial
and military applications.
The MP4TD1100 is fabricated using a 10 GHz f T silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
Feedback Capacitor
Ground
Optional RF Output & +5.5 Volts
375
µ
(14.8 mil)
375
µ
(14.8 mil)
14
12
10
GAIN (dB)
8
6
4
2
0
TYPICAL POWER GAIN vs FREQUENCY
Notes:
(unless otherwise specified)
1. Chip Thickness is 120
µm;
4.8 mils
2. Bond Pads are 40
µm;
1.6 mils typical in diameter
3. Output Contact & +DC Voltage Is Normally Made On
Backside Of Chip At Die Attach
4. Tolerance:µm .xx =
±.13;
mil .x =
±.5
Id=60mA
Ordering Information
Model No.
MP4TD1100G
MP4TD1100W
Type of Carrier
GEL PACK
Waffle Pack
0.1
1
FREQUENCY (GHz)
10
Electrical Specifications @ T
A
= +25°C, Id = 60 mA, Z0 = 50Ω
Symbol
Parameters
Test Conditions
Gp
f = 0.1 GHz
Power Gain (S21
2)
Gain Flatness
f = 0.1 to 0.7 GHz
∆Gp
f
3dB
3 dB Bandwidth
ref 50 MHz Gain
SWR
in
Input SWR
f = 0.1 to 2.0 GHz
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
P
1dB
Output Power @ 1dB Gain Compression
f = 0.7 GHz
NF
f = 1.0 GHz
50
Noise Figure
IP
3
Third Order Intercept Point
f = 1.0 GHz
t
D
Group Delay
f = 1.0 GHz
V
d
Device Voltage
-
dV/dT
Device Voltage Temperature Coefficient
-
Specification Subject to Change Without Notice
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
-
-
-
-
-
-
-
-
-
4.5
-
Typ.
12.5
+ 1.2
1.0
1.9
1.9
17.5
4.5
30.0
160
5.5
-8.0
Max.
-
-
-
-
-
-
-
-
-
6.5
-
1
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
FX (408) 432-3440