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MP4TD1170 参数 Datasheet PDF下载

MP4TD1170图片预览
型号: MP4TD1170
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 47 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
 浏览型号MP4TD1170的Datasheet PDF文件第2页浏览型号MP4TD1170的Datasheet PDF文件第3页  
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
High Dynamic Range Cascadable 50Ω/75Ω Gain Block
3dB Bandwidth: 50 MHz to 1.0 GHz
17.0 dBm Typical P
1dB
@ 1.0 GHz
12 dB Typical Gain @ 0.5 GHz
4.0 dB Typical Noise Figure @ 1.0 GHz
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
.040
1,02
MP4TD1170
Gold-Ceramic Microstrip Package Outline
1,2
4
GND
RF INPUT
1
RF OUT
AND BIAS
3
.020
0,51
Description
M-Pulse's MP4TD1170 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package. The MP4TD1170 is designed for use in 50Ω
or 75Ω systems where a high dynamic range and low
distortion gain block is required. Typical applications
include narrow and wide band IF and RF amplifiers in
industrial and military applications.
The MP4TD1170 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
14
12
Id=60mA
10
GAIN (dB)
8
6
4
2
0
0.1
1
FREQUENCY (GHz)
10
2
GND
.004 ±.002
0,1±0,05
.070
1,78
.035
0,89
.495 ±.030
12,57 ±0,76
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±.005;
mm .xx =
±.13
Pin Configuration
Pin Number
Pin Description
1
RF Input
2&4
AC/DC Ground
3
RF Output and DC Bias
Ordering Information
Model No.
MP4TD1170
MP4TD1170T
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Package
Hermetic Ceramic
Tape and Reel
Min.
11.5
-
-
-
-
16.0
-
-
-
4.5
-
Typ.
12.5
±0.9
1.0
1.8
1.9
17.0
4.0
30.0
160
5.5
-8.0
Max.
13.5
±1.1
-
-
-
-
4.5
-
-
6.5
-
Electrical Specifications @ T
A
= +25°C, Id = 60 mA, Z0 = 50Ω
Symbol Parameters
Test Conditions
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
Gain Flatness
f = 0.1 to 0.7 GHz
ΔGp
f
3dB
3 dB Bandwidth
ref 50 MHz Gain
SWR
in
Input SWR
f = 0.1 to 2.0 GHz
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
P
1dB
Output Power @ 1 dB Gain Compression
f = 0.7 GHz
NF
f = 0.7 GHz
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
f = 1.0 GHz
t
D
Group Delay
f = 1.0 GHz
V
d
Device Voltage
-
dV/dT
Device Voltage Temperature Coefficient
-
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
1
FX (408) 432-3440