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MP4TD4136T 参数 Datasheet PDF下载

MP4TD4136T图片预览
型号: MP4TD4136T
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 50 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
 浏览型号MP4TD4136T的Datasheet PDF文件第2页浏览型号MP4TD4136T的Datasheet PDF文件第3页  
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
Cascadable 50Ω Gain Block
3dB Bandwidth: DC to 1.0 GHz
15.0 dB Typical Gain @ 0.5 GHz
Unconditionally Stable (k>1)
3.3 Volt Operation
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
MP4TD4135, MP4TD4136
Ceramic Microstrip Case Style Outlines
1,2,3
Available in short lead version as MP4TD4136.
4
.085
2,16
RF OUT
AND BIAS
3
.020
0,508
GND
RF INPUT
1
Description
M-Pulse's MP4TD4135 and MP4TD4136 are high
performance silicon bipolar MMICs housed in a cost
effective ceramic microstrip packages. The MP4TD4135
and MP4TD4136 are designed for use where a general
purpose 50Ω gain block is required. Typical applications
include narrow and wide band IF and RF amplifiers in
industrial and military applications.
The MP4TD4135 and MP4TD4136 are fabricated using
a 10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased
performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
18
16
14
GAIN (dB)
12
10
8
6
GAIN FLAT to DC
4
0.1
1
FREQUENCY (GHz)
10
Id=35mA
.057
1,45
.455 ±.030
11,54 ±0,76
0.180 ±0.010
4,57 ±0,25 MA4TD4136
2
GND
.100
2,54
ø .083
2,11
.022
0,56
.006 ±.002
0,15 ±0,05
MA4TD4135
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±.005;
mm .xx =
±.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
1
2&4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Electrical Specifications @ T
A
= +25°C, Id = 35 mA, Z0 = 50Ω
Symbol
Parameters
Test Conditions
Units
Gp
f = 0.1 GHz
dB
Power Gain (⏐S21
2)
Gain Flatness
f = 0.1 to 0.9 GHz
dB
ΔGp
f
3 dB
3 dB Bandwidth
-
GHz
SWR
in
Input SWR
f = 0.1 to 1.5 GHz
-
SWR
out
Output SWR
f = 0.1 to 1.5 GHz
-
P
1dB
Output Power @ 1dB Gain Compression
f = 1.0 GHz
dBm
NF
f = 1.0 GHz
dB
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
t
D
Group Delay
f = 1.0 GHz
ps
V
d
Device Voltage
-
V
dV/dT
Device Voltage Temperature Coefficient
-
mV/°C
Parameter
Absolute Maximum Ratings
1
Specification Subject to Change Without Notice
Min.
Typ.
Max.
15.5
16.0
17.0
-
+ 1.0
-
-
1.2
-
-
1.5
-
-
1.5
-
-
8.5
-
-
4.2
-
-
19.0
-
-
200
-
2.8
3.3
3.7
-
-5.0
-
Absolute Maximum
1
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
FX (408) 432-3440