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MP4TD1136 参数 Datasheet PDF下载

MP4TD1136图片预览
型号: MP4TD1136
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 51 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
 浏览型号MP4TD1136的Datasheet PDF文件第2页浏览型号MP4TD1136的Datasheet PDF文件第3页  
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
High Dynamic Range Cascadable
50Ω/75Ω Gain Block
3dB Bandwidth: 50 MHz to 1.0 GHz
17 dBm Typical P
1dB
@ 0.7 GHz
11 dB Typical Gain @ 0.5 GHz
4.0 dB Typical Noise Figre @ 0.7 GHz
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
MP4TD1135, MP4TD1136
Ceramic Microstrip Case Style Outlines
1,2,3
Available in short lead version as MP4TD1136.
4
.085
2,15
RF OUT
AND BIAS
3
.020
0,508
GND
RF INPUT
1
Description
M-Pulse's MP4TD1135 and MP4TD1136 are high
performance silicon bipolar MMICs housed in cost effective
ceramic microstrip packages.
The MP4TD1135 and
MP4TD1136 are designed for use in 50Ω or 75Ω systems
where a high dynamic range gain block is required. Typical
applications include narrow and wide band IF and RF
amplifiers in industrial and military applications.
The MP4TD1135 and MP4TD1136 are fabricated using a
10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased performance
and reliability.
.057
1,45
.455 ±.030
11,54 ±0,76
0.180±0.010
4.57 ±0,25
MA4TD1136
2
GND
.100
2,54
ø .083
2,11
.022
0,56
.006 ±.002
0,15 ±0,05
MA4TD1135
TYPICAL POWER GAIN vs FREQUENCY
14
12
10
GAIN (dB)
8
6
4
2
0
0.1
1
FREQUENCY (GHz)
10
Id=60mA
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±.005;
mm .xx =
±.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
1
2&4
3
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Min.
11.5
-
-
-
-
16.0
-
-
-
4.5
-
Typ.
12.5
+ 0.9
1.0
2.0
1.9
17.0
4.0
30.0
160
5.5
-8.0
Max.
13.5
+ 1.1
-
-
-
-
4.5
-
-
6.5
-
Electrical Specifications @ T
A
= +25°C, Id = 60 mA, Z0 = 50Ω
Symbol
Parameters
Test Conditions
2)
Gp
f = 0.1 GHz
Power Gain (⏐S21
Gain Flatness
f = 0.1 to 0.7 GHz
ΔGp
f
3dB
3 dB Bandwidth
ref 50 MHz Gain
SWR
in
Input SWR
f = 0.1 to 2.0 GHz
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
P
1dB
Output Power @ 1dB Gain Compression
f = 0.7 GHz
NF
f = 0.7 GHz
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
f = 1.0 GHz
t
D
Group Delay
f = 1.0 GHz
V
d
Device Voltage
-
dV/dT
Device Voltage Temperature Coefficient
-
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
1
FX (408) 432-3440