欢迎访问ic37.com |
会员登录 免费注册
发布采购

MP4TD0920 参数 Datasheet PDF下载

MP4TD0920图片预览
型号: MP4TD0920
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 51 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
 浏览型号MP4TD0920的Datasheet PDF文件第2页浏览型号MP4TD0920的Datasheet PDF文件第3页  
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
Cascadable 50Ω Gain Block
3dB Bandwidth: DC to 4.0 GHz
7.5 dB Typical Gain @ 1.0 GHz
Low SWR: <1.6:1 from 0.1 to 3.0 GHz
Hermetic Gold-BeO Microstrip Package
The 20 package allows higher power operation
Description
M-Pulse's MP4TD0920 is a high performance silicon bipolar
MMIC housed in a hermetic high reliability package. The
MP4TD0920 is designed for use where a general purpose 50Ω
gain block is required. Typical applications include narrow and
wide band IF and RF amplifiers in industrial and military
applications. The 20 style package is a superior thermal
dissipation package. This allows larger DC Current and the
resultant improvement in ouput power and P1dB performance
than that available from the packages for this chip.
The MP4TD0920 is fabricated using a 10 GHz fT silicon bipolar
technology that features gold metalization and IC passivation
for increased performance and reliability.
4
2
MP4TD0920
Gold-BeO Microstrip Package Outline
1,2
0.030
0.762
3
1
0.30
7.62
TYP.
0.060
1.525
0.053
1.35
0.132
5.42
DIA
0.003
0.076
0.205
5.21
DIA
0.020
0.51
TYPICAL POWER GAIN vs FREQUENCY
12
Id= 3 5 m A
10
8
6
4
2
0
0 .1
1
F R E Q U E N C Y (G H z)
10
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±.005;
mm .xx =
±.13
Pin Configuration
Pin Number
Pin Description
1
RF Input
2&4
AC/DC Ground
3
RF Output and DC Bias
Ordering Information
Model No.
MP4TD0920
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
GAIN (dB)
Package
BeO Ceramic
Min.
6.5
-
-
-
-
-
-
-
-
7.0
-
Typ.
7.5
±0.5
4.0
1.4
1.6
11.5
6.0
23.0
100
7.8
-16.0
Max.
8.5
±0.7
-
-
-
-
-
-
-
8.6
-
Electrical Specifications @ T
A
= +25°C, Id = 35 mA, Z0 = 50Ω
Symbol
Parameters
Test Conditions
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
Gain Flatness
f = 0.1 to 2.0 GHz
ΔGp
f
3 dB
3 dB Bandwidth
-
SWR
in
Input SWR
f = 0.1 to 3.0 GHz
SWR
out
Output SWR
f = 0.1 to 3.0 GHz
P
1 dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
NF
f = 1.0 GHz
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
f = 1.0 GHz
t
D
Group Delay
f = 1.0 GHz
V
d
Device Voltage
-
dV/dT
Device Voltage Temperature Coefficient
-
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
1
FX (408) 432-3440