ABSOLUTE MAXIMUM RATINGS
T
J
T
ST
T
C
T
LD
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V
GS
I
D
I
DM
R
TH-JC
R
TH-JC
1.3°C/W
2.1°C/W
ELECTRICAL SPECIFICATIONS
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance 2
Drain-Source On Resistance 3
Forward Transconductance 1
Total Gate Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Fall Time
1
1
1
1
1
Gate-Source Charge 1
Test Conditions
4
V
GS
=0 I
D
=0.25mA
V
DS
=200V V
GS
=0V
V
GS
=±20V V
DS
=0
V
DS
=V
GS
I
D
=250µA
V
GS
=10V ID = 20A
V
GS
=10V I
D
=20A
V
DS
=50V I
D
=20A
I
D
= 20A
V
DS
=160V
V
GS
= 10V
V
DD
=100V
I
D
= 20A
R
G
= 6.2
Ω
R
D
= 3.2
Ω
V
GS
=0V
V
DS
=25V
f=1MHz
I
S
=20 A V
GS
=0V
I
S
=20 A di/dt=100A/µS
MSK3001
Min.
200
-
-
2.0
-
-
2.7
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
16
86
70
62
2800
780
250
2.0
360
4.6
Max.
-
250
±100
4.0
0.12
0.09
-
140
28
74
-
-
-
-
-
-
-
-
540
6.9
Units
V
µA
nA
V
Ω
Ω
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
nS
µC
Turn-Off Delay Time 1
Input Capacitance 1
Output Capacitance 1
Reverse Transfer Capacitance 1
Body Diode
Forward On Voltage
1
Reverse Recovery Time 1
Reverse Recovery Charge 1
NOTES:
1
2
3
4
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
T
A
=25°C unless otherwise specified.
2
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±20V MAX
20A MAX
30A MAX
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200V MAX
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V
DSS
V
DGDR
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Drain to Source Voltage
Drain to Gate Voltage
(R
GS
=1MΩ)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Thermal Resistance
(Junction to Case)@25°C
Thermal Resistance
(Junction to Case)@125°C
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200V MAX
Single Pulse Avalanche Energy
410 mJ
Junction Temperature
+150°C MAX
Storage Temperature
-55°C to +150°C
Case Operating Temperature Range -55°C to +125°C
Lead Temperature Range
(10 Seconds)
300°C MAX
Rev. - 5/01
MSK [ M.S. KENNEDY CORPORATION ]
