ABSOLUTE MAXIMUM RATINGS
55V
±20V
30A
14A
40A
20A
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R
TH-JC
2°C/W
6°C/W
ELECTRICAL SPECIFICATIONS
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance 2 5
Drain-Source On Resistance 3
Forward Transconductance
N-Channel (Q2,Q4,Q6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Rise Time
Fall Time
1
1
1
1
1
1
1
1
1
I
D
=30A
V
DS
=44V
V
GS
=10V
V
DD
=28V
I
D
=30A
R
G
=2.5Ω
R
D
=0.93Ω
V
GS
=0V
V
DS
=25V
f=1MHz
I
D
=-10A
V
DS
=-44V
V
GS
=-10V
V
DD
=-28V
I
D
=-10A
1
1
1
R
G
=13Ω
R
D
=2.6Ω
V
GS
=0V
V
DS
=-25V
f=1MHz
I
S
=30A V
GS
=0V (Q2,Q4,Q6)
I
S
=-10A V
GS
=0V (Q1,Q3,Q5)
1
1
I
S
=30A di/dt=100A/µS (Q2,Q4,Q6)
I
S
=-10A di/dt=100A/µS (Q1,Q3,Q5)
I
S
=30A di/dt=100A/µS (Q2,Q4,Q6)
I
S
=-10A di/dt=100A/µS (Q1,Q3,Q5)
1
Test Conditions
4
V
GS
=0 I
D
=0.25mA (All Transistors)
V
DS
=55V V
GS
=0V (Q2,Q4,Q6)
V
DS
=-55V V
GS
=0V (Q1,Q3,Q5)
V
GS
=±20V V
DS
=0 (All Transistors)
V
DS
=V
GS
I
D
=250µA (Q2,Q4,Q6)
V
DS
=V
GS
I
D
=250µA (Q1,Q3,Q5)
V
GS
=10V I
D
=10A (Q2,Q4,Q6)
V
GS
=-10V I
D
=-10A (Q1,Q3,Q5)
V
GS
=10V I
D
=10A (Q2,Q4,Q6)
V
GS
=10V I
D
=-10A (Q1,Q3,Q5)
V
DS
=25V I
D
=10A (Q2,Q4,Q6)
V
DS
=-25V I
D
=-10A (Q1,Q3,Q5)
MSK3018
Min.
55
-
-
-
2.0
-2.0
-
-
-
-
30
4.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
14
62
47
58
3400
830
240
-
-
-
13
55
130
41
620
280
140
1.3
-1.6
120
54
510
110
Max.
-
25
-25
±100
4.5
-4.5
0.04
0.16
0.013
0.10
-
-
150
24
55
-
-
-
-
-
-
-
35
7.9
16
-
-
-
-
-
-
-
-
-
190
82
760
160
Units
V
µA
µA
nA
V
V
Ω
Ω
Ω
Ω
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
nS
nS
nC
nC
Turn-On Delay Time 1
Turn-Off Delay Time
Input Capacitance
Output Capacitance
P-CHANNEL (Q1,Q3,Q5)
Total Gate Charge
1
Gate-Source Charge 1
Gate-Drain Charge 1
Turn-On Delay Time 1
Rise Time
Fall Time
1
1
Turn-Off Delay Time
Input Capacitance
Output Capacitance
BODY DIODE
Forward On Voltage
1
Reverse Transfer Capacitance
Reverse Transfer Capacitance 1
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
1
2
3
4
5
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
T
A
=25°C unless otherwise specified.
Rev. A 7/00
2
Test limits due to autotest fixturing constraints.
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I
DM
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V
GS
I
D
T
J
T
ST
T
C
T
LD
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MAX
MAX
MAX
MAX
MAX
MAX
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V
DSS
V
DGDR
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1MΩ)
Gate to Source Voltage (Continuous)
Continuous Current (N-Channel)
(P-Channel)
Pulsed Current (N-Channel)
(P-Channel)
Thermal Resistance (Junction to Case)
(N-Channel FETs)
(P-Channel FETs)
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55V MAX
Single Pulse Avalanche Energy
570mJ
(Q2,Q4,Q6)
180mJ
(Q1,Q3,Q5)
+175°C MAX
Junction Temperature
-55°C to +150°C
Storage Temperature
Case Operating Temperature Range -55°C to +125°C
Lead Temperature Range
300°C MAX
(10 Seconds)
MSK [ M.S. KENNEDY CORPORATION ]
