Naina Semiconductor Ltd.
emiconductor
Silicon Rectifier, 10.0A
Features
•
Diffused junction
•
Low cost
•
Low reverse leakage current
•
High current capability & low forward voltage drop
•
Plastic material carrying UL recognition 94V
94V-0
•
Polarity: Color Band denotes Cathode
•
Lead free finish
10A05 - 10A10
A05
Thermal and Mechanical Specifications
(T
A
= 25
0
C unless otherwise
specified)
Parameters
Maximum operating junction
temperature range
Maximum storage temperature
range
Typical thermal resistance junction
to ambient
Approximate weight
Symbol
T
J
T
Stg
R
θJA
W
Values
- 55 to +
125
- 55 to +
150
10
0
Units
0
C
C
JEDEC R
R-6
0
C/W
g
2.1
Electrical Characteristics
(T
A
= 25
0
C unless otherwise specified
specified)
Parameter
Maximum repetitive peak reverse
voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output
current @ T
A
= 50
0
C
Peak forward surge current (8.3ms)
single half sine-wave superimposed
on rated load
Maximum DC forward voltage drop
per element @ 10 A
Typical junction capacitance
Maximum DC reverse
T
A
= 25
0
C
current at rated DC
T
A
= 100
0
C
blocking voltage
Symbol
10A05 10A1
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
CJ
I
R
50
35
50
100
70
100
10A2 10A4 10A6 10A8 10A10
200
140
200
400
280
400
10
600
1.0
150
10
600
420
600
800
560
800
1000
700
1000
Units
V
V
V
A
A
V
pF
µA
100
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120
4205450
0120-4273653
sales@nainasemi.com • www.nainasemi.com
NAINA [ NAINA SEMICONDUCTOR LTD. ]
