Naina Semiconductor Ltd.
emiconductor
Thyristor – Diode Module
Features
•
•
•
•
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Low thermal resistance
160NTD
1
Maximum Ratings
(T
A
= 25
0
C unless otherwise noted)
Parameter
Maximum average forward current @ T
J
=
0
85 C
Maximum average RMS forward current
Maximum non-repetitive surge current @ t
= 10ms
Maximum I t for fusing @ t = 10ms
2
Symbol
I
F(AV)
I
F(RMS)
I
FSM
It
2
Values
160
350
5100
120
Units
A
A
A
kA s
M3 PACKAGE
2
Thermal & Mechanical Specifications
(T
A
= 25
0
C unless otherwise noted)
Parameter
Operating junction temperature range
Thermal resistance, junction to case
Symbol
T
J
R
th(JC)
Values
-65 to +1
65 +125
0.16
O
Units
O
C
C/W
Electrical Characteristics
(T
A
= 25
0
C unless otherwise noted)
Parameter
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
Gate current required to trigger
Gate voltage required to trigger
Holding current range
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
Symbol
I
T(max)
V
RRM
V
FM
I
GT
V
GT
I
H
I
L
dv/dt
V
ISO
Values
160
200 to 1600
1.5
150
2.5
200
500
1000
3500
Units
A
V
V
mA
V
mA
mA
V/µs
V
1
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4205450
0120-4273653
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