IN 5832
SCHOTTKY RECTIFIER
NAINA
40AMPERE
20 VOLTS
Designer’s Data Sheet
Switchmode Power Rectifirs
.
employing the Schottky Barrier principle in a large area metal-to-silicon power
diode.State-of-the-art geometry features epitaxial construction with oside
passivation and metal overlap contact. ideally suited for use as rectifiers in
low-voltage, high-frequency inverters, free whelling diodes, and polarity
protection diodes.
• Extremely Low V
F
• Low Power Loss/High
• Low Stored Charge, Majority
Efficiency
Carrier Conduction
• High Surge Capacity
Mechnical Characteristics :
• Case Welded steel, hermetically seated
• Finish : All External Surtaces Corrosion Resistant and Terminal .Lead is
Readily Solderable
Solder Heat : The excellent heat transfer property of the heavy duty copper
anode terminal which transmits heat away from the die requires that caution be
used when attaching wires.
•
Stud Torque: 15 Ib-in max
MAXIMUM RATINGS
Ratings
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
PC Blooking Voltage
Nonrepetitive Peak Reverse Voltage
Average Rectified Forward Current
V
R(equiv)
≤0.2
V
R(dc)..
T
C
=85
0
C
Symbol
V
RRM
V
RWM
V
RSM
V
RSM
I
O
1N5832
20
UNIT
Volts
24
40
100
800
for one cycle
-65 to + 125
150
Volts
Amps
C
Amps
0
Ambient Temperature Rated V
R(dc).
P
F(AV)
= 0, R
θJA
=3.5
0
C/W
T
A
Nonrepetitive Peak Surge Current
I
FSM
(surge applied at rated load conditions, halfwave,
single phase, 50 Hz)
Operating and Storage Junction Temperature Range
T
J,
T
stg
(Reverse voltage applied)
Peak Operating Junction Temperature (Forward
T
J(pk)
Current Applied)
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction to case
R
θJC
0
ELECTRICAL CHARACTERISTICS
(T
C
=25 Cunless otherwise noted)
Maximum Instantaneous Forward Voltage
(1)
(I
F
=10 Amps)
V
F
( I
F
=40 Amps))
(I
F
=125 Amps)
Maximum Instantaneous Reverse Current @
Rated dc Voltage
(1)
(1) (T
C
=100
0
C
Data (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle=2%,
0
C
C
0
Max
1.0
0.36
0.52
0.980
20
150
0
Unit
C/W
Volts
ma
NAINA [ NAINA SEMICONDUCTOR LTD. ]
